k8d6316u Samsung Semiconductor, Inc., k8d6316u Datasheet - Page 37

• Manufacturer Part Number: k8d6316u
• Description: 64m Bit 8m X8/4m X16 Dual Bank Nor Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K8D6x16UTM / K8D6x16UBM
SWITCHING WAVEFORMS
Alternate WE Controlled Program Operations
Address
Write Cycle Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
CE Setup Time
CE Hold Time
OE Setup Time
Write Pulse Width
Write Pulse Width High
Programming Operation
Accelerated Programming
Operation
Read Cycle Time
Chip Enable Access Time
Output Enable Time
CE & OE Disable Time
Output Hold Time from Address, CE or OE
Program/Erase Valide to RY/BY Delay
Recovery Time from RY/BY
RY/BY
DATA
WE
OE
CE
t
CH
Parameter
t
CS
555H
t
OES
t
WP
A0H
t
Notes : 1. DQ7 is the output of the complement of the data written to the device.
DS
t
WC
Word
Byte
Word
Byte
t
WPH
t
t
DH
2. DOUT is the output of the data written to the device.
3. PA : Program Address, PD : Program Data
4. The illustration shows the last two cycles of the program command sequence.
AS
PA
t
AH
PD
Symbol
t
ACCPGM
t
t
t
t
BUSY
t
t
WPH
PGM
t
t
t
t
t
t
OES
t
t
t
t
t
t
t
WC
DH
CH
WP
RC
OE
OH
BUSY
AS
AH
DS
CS
CE
DF
RB
37
t
Data Polling
PGM
Min
70
45
35
35
25
70
90
0
0
0
0
0
0
0
-
-
-
14(typ.)
9(typ.)
9(typ.)
7(typ.)
-7
Status
Max
70
25
16
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PA
DOUT
Min
80
45
35
35
25
80
90
0
0
0
0
0
0
0
-
-
-
14(typ.)
9(typ.)
9(typ.)
7(typ.)
-8
t
RB
Max
FLASH MEMORY
80
25
16
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min
90
45
45
45
30
90
90
0
0
0
0
0
0
0
-
-
-
14(typ.)
9(typ.)
9(typ.)
7(typ.)
t
-9
CE
t
RC
Revision 1.5
t
March 2005
OE
Max
90
35
16
-
-
-
-
-
-
-
-
-
-
-
-
-
-
t
t
DF
OH
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
us
ns
ns
ns
ns
ns
ns
ns
s
s