k8d6316u Samsung Semiconductor, Inc., k8d6316u Datasheet - Page 43

• Manufacturer Part Number: k8d6316u
• Description: 64m Bit 8m X8/4m X16 Dual Bank Nor Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K8D6x16UTM / K8D6x16UBM
Address*
SWITCHING WAVEFORMS
Toggle Bit During Internal Routine Operation
DQ6/DQ2
Output Enable Access Time
OE Hold Time
Address Hold Time
Address Setup
Address Setup Time
Data Hold Time
CE High during toggle bit polling
OE High during toggle bit polling
RY/BY
DQ
DQ
WE
WE
OE
CE
6
2
Embedded
Erasing
Parameter
Enter
Note : Address for the write operation must include a bank address (A20~A21) where the data is written.
Note : DQ2 is read from the erase-suspended block.
Data In
t
with OE or CE
DQ
OEH2
t
DH
Erase
2
Toggle
and DQ
Suspend
Erase
6
Status
Erase Suspend
Data
t
AHT
Read
t
OEPH
Symbol
t
t
t
OEH2
t
t
CEPH
OEPH
t
ASO
t
t
AHT
OE
AS
DH
t
ASO
Suspend Program
Enter Erase
43
Min
10
55
20
20
t
Status
0
0
0
AHT
-
Data
t
Suspend
Program
-7
CEPH
Erase
t
AS
Max
25
-
-
-
-
-
-
-
Erase Suspend
Min
10
55
20
20
0
0
0
-
Read
Status
Data
-8
Max
25
FLASH MEMORY
-
-
-
-
-
-
-
Resume
Erase
Min
10
55
20
20
0
0
0
-
Erase
-9
Array Data Out
Revision 1.5
Max
March 2005
35
-
-
-
-
-
-
-
Complete
Erase
Unit
ns
ns
ns
ns
ns
ns
ns
ns