MRF8P18265H FREESCALE [Freescale Semiconductor, Inc], MRF8P18265H Datasheet - Page 3

• Manufacturer Part Number: MRF8P18265H
• Description: RF Power Field Effect Transistors
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
Typical Performance
Bandwidth
P
P
IMD Symmetry @ 17 W PEP, P
VBW Resonance Point
Gain Flatness in 75 MHz Bandwidth @ P
Gain Variation over Temperature
Output Power Variation over Temperature
1. Measurement made with device in a symmetrical Doherty configuration.
2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
out
out
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
(--30°C to +85°C)
(--30°C to +85°C)
@ 1 dB Compression Point, CW
@ 3 dB Compression Point, CW

(2)
(1)
30 dBc
(In Freescale Doherty Test Fixture, 50 ohm system) V
Characteristic
out
where IMD Third Order
(T
out
A
= 25°C unless otherwise noted) (continued)
= 72 W Avg.
Symbol
IMD
VBW
DD
∆P1dB
P1dB
P3dB
G
∆G
= 30 Vdc, I
sym
F
res
DQA
Min
—
—
—
—
—
—
—
MRF8P18265HR6 MRF8P18265HSR6
= 800 mA, V
0.005
0.01
Typ
224
280
0.4
72
88
GSB
= 1.3 V, 1805--1880 MHz
Max
—
—
—
—
—
—
—
dB/°C
dB/°C
Unit
MHz
MHz
dB
W
W
3