MRF8P18265H FREESCALE [Freescale Semiconductor, Inc], MRF8P18265H Datasheet - Page 5

• Manufacturer Part Number: MRF8P18265H
• Description: RF Power Field Effect Transistors
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor, Inc.
17.5
16.5
15.5
14.5
17
16
15
Figure 3. Output Peak- -to- -Average Ratio Compression (PARC)
16.8
16.6
16.4
16.2
15.8
15.6
15.4
15.2
14.8
--20
--30
--40
--50
--60
--70
16
15
--1
--2
--3
--4
--5
1
0
1760
25
1
Broadband Performance @ P
Figure 4. Intermodulation Distortion Products
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 1840 MHz
--1 dB = 36 W
V
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
V
I
DQA
Compression (PARC) versus Output Power
DD
DD
Figure 5. Output Peak- -to- -Average Ratio
V
f = 1840 MHz, Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth
1780
= 30 Vdc, P
DD
= 30 Vdc, P
= 800 mA, V
--2 dB = 52 W
= 30 Vdc, I
TYPICAL CHARACTERISTICS
IM7--U
45
Input Signal PAR = 9.9 dB
@ 0.01% Probability on CCDF
1800
versus Two- -Tone Spacing
P
out
out
TWO--TONE SPACING (MHz)
out
GSB
DQA
IM5--U
= 72 W (Avg.), I
= 17 W (PEP)
, OUTPUT POWER (WATTS)
--3 dB = 72 W
1820
f, FREQUENCY (MHz)
= 1.3 Vdc
= 800 mA, V
65
IM7--L
1840
10
PARC
Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
IM5--L
DQA
GSB
85
1860
= 800 mA, V
= 1.3 Vdc
out
ACPR
IM3--L
IM3--U
= 72 Watts Avg.
PARC
1880
IRL
G
105
GSB
η
ps
D
= 1.3 Vdc
1900
G
ACPR
ps
η
D
1920
125
100
MRF8P18265HR6 MRF8P18265HSR6
60
50
40
30
20
10
47
46
45
44
43
--28
--29
--30
--31
--32
0
--33
--25
--27
--29
--31
--33
--35
--37
--10
--13
--16
--19
--22
--25
--2
--2.4
--2.8
--3.2
--3.6
--4
5