CEF05N65 CET [Chino-Excel Technology], CEF05N65 Datasheet - Page 2

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CEF05N65

Manufacturer Part Number
CEF05N65
Description
N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
CET [Chino-Excel Technology]
Datasheet
Electrical Characteristics
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 1mH, I
AS
= 1.3A, V
Parameter
DD
= 50V, R
b
G
= 25Ω, Starting T
c
c
J
= 25 C
b
T c = 25 C unless otherwise noted
CEP05N65/CEB05N65
Symbol
R
V
BV
t
t
V
C
C
I
C
Q
I
GS(th)
DS(on)
d(on)
d(off)
Q
g
I
GSSF
Q
GSSR
DSS
t
t
SD
oss
FS
iss
rss
I
r
gd
f
gs
DSS
g
S
2
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
Test Condition
= 0V, I
= 650V, V
= 30V, V
= -30V, V
= V
= 10V, I
= 40V, I
= 25V, V
= 300V, I
= 10V, R
= 480V, I
= 10V
= 0V, I
DS
, I
D
S
D
D
D
= 250 µ A
= 2A
GS
GEN
D
D
DS
DS
= 2A
= 250 µ A
= 2A
GS
= 4.5A,
= 4.5A,
= 0V,
= 0V
= 0V
= 0V
= 25Ω
CEF05N65
Min
650
2
17.5
Typ
590
85
20
17
16
47
13
2
4
2
5
-100
Max
2.4
4.5
1.5
100
32
94
35
25
34
17
4
Units
µ A
nA
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
A
V
4

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