CEF05N65 CET [Chino-Excel Technology], CEF05N65 Datasheet - Page 4

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CEF05N65

Manufacturer Part Number
CEF05N65
Description
N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
CET [Chino-Excel Technology]
Datasheet
V
Figure 9. Switching Test Circuit
GS
10
8
6
4
2
0
0
10
10
10
10
V
I
D
DS
=4.5A
0
-1
-2
-3
10
=480V
-5
R
GEN
Single Pulse
Qg, Total Gate Charge (nC)
3
D=0.5
0.2
0.1
0.05
0.02
0.01
Figure 7. Gate Charge
V
IN
G
6
Figure 11. Normalized Thermal Transient Impedance Curve
10
S
D
-4
9
V
DD
R
L
12
Square Wave Pulse Duration (sec)
10
V
CEP05N65/CEB05N65
OUT
-3
15
4
10
V
V
t
-2
d(on)
OUT
IN
10%
Figure 10. Switching Waveforms
10
10
10
10
2
1
0
-1
t
50%
on
10
10
10%
Single Pulse
0
R
-1
T
T
DS(ON)
PULSE WIDTH
C
J
V
=175 C
=25 C
90%
DS
t
Figure 8. Maximum Safe
r
INVERTED
CEF05N65
, Drain-Source Voltage (V)
Limit
P
1. R
2. R
3. T
4. Duty Cycle, D=t1/t2
DM
Operating Area
t
d(off)
10
JM-
θJC
θJC
1
T
t
1
=See Datasheet
C
10
(t)=r (t) * R
50%
= P* R
t
2
0
DC
90%
100ms
θJC
10ms
t
10%
off
θJC
1ms
10
90%
(t)
2
t
f
10
1
10
3
4

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