CEF05N65 CET [Chino-Excel Technology], CEF05N65 Datasheet - Page 3

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CEF05N65

Manufacturer Part Number
CEF05N65
Description
N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
CET [Chino-Excel Technology]
Datasheet
1200
1000
800
600
400
200
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
5
4
3
0
6
2
0
1
-50
0.0
0
Figure 5. Gate Threshold Variation
V
I
D
Figure 1. Output Characteristics
DS
=250µA
V
V
-25
T
=V
DS
DS
J
, Junction Temperature( C)
GS
5
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
5
Figure 3. Capacitance
0
with Temperature
10
25
10
C rss
50
C iss
C oss
15
V
75
15
GS
=10,8,7V
20
100
20
25
125
CEP05N65/CEB05N65
25
150
30
3
10
10
10-1
2.2
1.9
1.6
1.3
1.0
0.7
0.4
7.5
4.5
1.5
1
0
Figure 6. Body Diode Forward Voltage
9
6
3
0
-100
0.4
V
1
Figure 4. On-Resistance Variation
SD
I
V
Figure 2. Transfer Characteristics
D
GS
Variation with Source Current
=2A
V
, Body Diode Forward Voltage (V)
T
=10V
GS
-50
J
, Junction Temperature( C)
0.7
CEF05N65
2
, Gate-to-Source Voltage (V)
T
J
with Temperature
=125C
0
1.0
3
50
25 C
1.3
4
100
-55 C
1.7
150
5
200
2.0
6

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