en29lv040-45rtip Eon Silicon Solution Inc., en29lv040-45rtip Datasheet - Page 20

• Manufacturer Part Number: en29lv040-45rtip
• Description: 4 Megabit 512k X 8-bit Uniform Sector Cmos 3.0 Volt-only Flash Memory
• Manufacturer: Eon Silicon Solution Inc.

Table 7. DC Characteristics
(T
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Symbol
V
a
I
I
I
I
V
V
I
CC1
CC2
CC3
CC4
V
V
V
I
LKO
= 0°C to 70°C or - 40°C to 85°C; V
I
LO
OH
ID
OL
LI
IH
ID
IL
Supply Current (Program or Erase)
A9 Voltage (Electronic Signature)
A9 Current (Electronic Signature)
Supply Current (Standby - CMOS)
Supply Current (Standby - TTL)
Output High Voltage CMOS
Supply Current (read) TTL
Supply voltage (Erase and
Output High Voltage TTL
Output Leakage Current
Automatic Sleep Mode
Input Leakage Current
Output Low Voltage
Input High Voltage
Input Low Voltage
Program lock-out)
Parameter
(read) CMOS
CC
= 2.7-3.6V)
Byte program, Sector or
Chip Erase in progress
CE# = V
Rev. D, Issue Date: 2004/03/31
CE# = Vcc ± 0.3V
V
V
Test Conditions
0V≤ V
20
I
0V≤ V
IH
IL
I
OH
I
OH
OL
CE# = V
= Vss ± 0.3 V
= Vcc ± 0.3 V
f = 5MHz
A9 = V
= -100 µA,
IL
= -2.0 mA
= 4.0 mA
OUT
©2003 Eon Silicon Solution, Inc., www.essi.com.tw
IN
; OE# = V
≤ Vcc
≤ Vcc
ID
IH
,
IH
;
0.85 x
Vcc -
0.7 x
0.4V
10.5
-0.5
Min
Vcc
Vcc
2.3
Typ
EN29LV040
0.4
15
8
7
1
1
Vcc ±
Max
0.45
11.5
100
1.0
5.0
5.0
0.8
0.3
2.5
±1
±1
14
12
30
Unit
mA
mA
mA
mA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V