CPWR-AN08 CREE [Cree, Inc], CPWR-AN08 Datasheet - Page 3

• Manufacturer Part Number: CPWR-AN08
• Description: Application Considerations for Silicon Carbide MOSFETs
• Manufacturer: CREE [Cree, Inc]

3
CPWR-AN08, REV -
Application Considerations for SiC MOSFETs -
January 2011
One of the key advantages to SiC is the high temperature capability afforded by the wide bandgap. This
One of the key advantages to SiC is the high temperature capability afforded by the wide bandgap. This
One of the key advantages to SiC is the high temperature capability afforded by the wide bandgap. This
is clearly reflected in the leakage current comparison at elevated temperature shown in Figure 3. The
is clearly reflected in the leakage current comparison at elevated temperature shown in Figure 3. The
is clearly reflected in the leakage current comparison at elevated temperature shown in Figure 3. The
CMF20120D has about 20x lower leakage current at 150 °
current increases dramatically, to the point where the device fails due to excess power dissipation. The
current increases dramatically, to the point where the device fails due to excess power dissipation. The
current increases dramatically, to the point where the device fails due to excess power dissipation. The
CMF20120D leakage current is still acceptable
devices.
As previously mentioned, the recommended gate drive voltage for the
As previously mentioned, the recommended gate drive voltage for the CMF20120D is +
5V negative bias. However, the amount of gate charge required to switch the device is low. The
1E-1
1E-2
1E-3
1E-4
1E-5
1E-6
1E-7
0
Figure 2: Forward conduction characteristics
has about 20x lower leakage current at 150 ° C. At 200 ° C, the Si comparison parts leakage
leakage current is still acceptable at this temperature and is over 100x lower than the Si
200
. However, the amount of gate charge required to switch the device is low. The
. However, the amount of gate charge required to switch the device is low. The
: Forward conduction characteristics comparison (V
T
T
J
400
J
= 150 ˚C
= 25 ° C
Figure 3: High temperature leakage current comparison
Figure 3: High temperature leakage current comparison
V
DS
, V
600
CE
(V)
(V)
800
TFS IGBT
This document is provided for informational purposes only and is not a warranty or a specification.
For product specifications, please see the data sheets available at www.cree.com/power. For warranty
information, please contact Cree Sales at [e-mail].
1000
Application Considerations for SiC MOSFETs
January 2011
1200
4
° C, the Si comparison parts leakage
GS
over 100x lower than the Si
T
T
= 20V, V
J
J
= 150 ° C
= 200 ˚C
GE
+20V and -2V to -
= 15V)
= 15V)