CPWR-AN08 CREE [Cree, Inc], CPWR-AN08 Datasheet - Page 6

• Manufacturer Part Number: CPWR-AN08
• Description: Application Considerations for Silicon Carbide MOSFETs
• Manufacturer: CREE [Cree, Inc]

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Copyright © 2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero
Recovery are registered trademarks of Cree, Inc.
This document is provided for informational purposes only and is not a warranty or a specification. This product is currently
available for evaluation and testing purposes only, and is provided “as is” without warranty. For preliminary, non-binding product
specifications, please see the preliminary data sheet available at www.cree.com/power.
CPWR-AN08, REV -
Application Considerations for SiC MOSFETs -
January 2011
The CMF20120D has definite system advantages over competing Si switching devices. However, its
unique operating characteristics need to be carefully considered to fully realize these advantages. The
gate driver needs to be capable of providing +20V and -2V to -5V negative bias with minimum output
impedance and high current capability. The parasitics between the gate driver and the CMF20120D need
to be minimized (close location, separate source return, etc.) to assure that the gate pulse has a fast rise
and fall time with good fidelity. The fast switching speed of the CMF20120D can result in higher ringing
and voltage overshoots. The effects of parasitics in the high current paths need to be carefully assessed.
References:
[1] R. J. Callanan, A. Agarwal, A Burk, M. Das, B. Hull, F. Husna, A. Powell, J. Richmond, Sei-Hyung
[2] Infineon IPW90R120C3 CoolMOS Datasheet, Rev 1.0, 2008-07-30.
[3] Fairchild FGA20N120FGD Datasheet, Rev A, December 2007
[4] International Rectifier IRGP20B120U-E Datasheet, PD-94117, 3/6/2001
[5] Microsemi APT34M120J Datasheet, 050-8088 Rev A, 2-2007
[6] F. Bjoerk, J. Handcock, and G. Deboy, “CoolMOSTM CP – How to make most beneficial use of the
Summary
Ryu, and Q. Zhang, “Recent Progress in SiC DMOSFETs and JBS Diodes at Cree”, IEEE Industrial
Electronics 34
http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IPW90R120C3
http://www.fairchildsemi.com/ds/FG%2FFGA20N120FTD.pdf
info/datasheets/data/irgp20b120u-e.pdf
http://www.microsemi.com/datasheets/APT34M120J_A.PDF
latest generation of super junction technology devices”, Infineon Application Note AN-CoolMOS-CP-
01, Version 1.1, Feb 2007.
http://www.infineon.com/dgdl/Aplication+Note+CoolMOS+CP+(+AN_CoolMOS_CP_01_Rev.+1.2).pdf
?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b40ac9a40688
th
Annual Conference – IECON 2008, pp 2885 – 2890, 10 – 13 Nov. 2008,
Application Considerations for SiC MOSFETs
January 2011
http://www.irf.com/product-
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