CPWR-AN08 CREE [Cree, Inc], CPWR-AN08 Datasheet - Page 4

• Manufacturer Part Number: CPWR-AN08
• Description: Application Considerations for Silicon Carbide MOSFETs
• Manufacturer: CREE [Cree, Inc]

4
CPWR-AN08, REV -
Application Considerations for SiC MOSFETs -
January 2011
ramifications of the modestly higher gate voltage and lower gate charge can be reconciled by using the
ramifications of the modestly higher gate voltage and lower gate charge can be reconciled by using the
product of gate charge and gate voltage as a metric of gate energy. The
comparison is shown in Figure 4. Even though the operating conditions are not exactly matched, the
results of this comparison show that the
other devices. Therefore, the higher voltage swing does not adversely affect
requirements. The CMF20120D V
is usually experienced with other gate controlled silicon devices.
observed in typical silicon MOSFETs and IGBTs. Once again, this is primarily due the mode
observed in typical silicon MOSFETs and IGBTs. Once again, this is primarily due the modest amount of
transconductance.
A popular figure of merit when comparing
Minimization of the figure of merit is an indicator of
CMF20120D and the other Si MOSF
32.4 *nC. The figure of merit of the
kV part whereas the Si SJMOSFET is rated at only 900 V.
ramifications of the modestly higher gate voltage and lower gate charge can be reconciled by using the
product of gate charge and gate voltage as a metric of gate energy. The gate charge and gate energy
results of this comparison show that the CMF20120D gate energy is comparable to or lower than the
is usually experienced with other gate controlled silicon devices. The Miller plateau is not as flat as
observed in typical silicon MOSFETs and IGBTs. Once again, this is primarily due the mode
. The figure of merit of the CMF20120D is 7.12 *nC. Furthermore, the CMF20120D
Gate Charge Comparison
Gate Charge Comparison
and the other Si MOSFETs is shown in Figure 5. The Si SJMOSFET has a figure of merit of
SJMOSFET is rated at only 900 V.
of merit is an indicator of the superior part. A comparison between the
the higher voltage swing does not adversely affect gate drive power
en comparing MOSFETs is the product of R
Figure 4
Figure 4: Gate charge and energy comparison
Figure 5: Qg*R
Even though the operating conditions are not exactly matched, the
Even though the operating conditions are not exactly matched, the
GS
GS
versus gate charge characteristics are somewhat different from what
versus gate charge characteristics are somewhat different from what
This document is provided for informational purposes only and is not a warranty or a specification.
For product specifications, please see the data sheets available at www.cree.com/power. For warranty
information, please contact Cree Sales at [e-mail].
DS(on)
Application Considerations for SiC MOSFETs
January 2011
Figure of Merit Comparison
5
6
5
4
3
2
1
0
1.75
Gate Energy Comparison
Gate Energy Comparison
A comparison between the
comparable to or lower than the
DS(on)
2.09
gate charge and gate energy
and total gate c
and total gate charge [6].
gate drive power
2.57
CMF20120D is a 1.2
is not as flat as
as a figure of merit of
2.70
5.44