RFD8P06LESM INTERSIL [Intersil Corporation], RFD8P06LESM Datasheet - Page 2

• Manufacturer Part Number: RFD8P06LESM
• Description: 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
• Manufacturer: INTERSIL [Intersil Corporation]

Absolute Maximum Ratings
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage (R
Continuous Drain Current
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Source to Drain Diode Specifications
NOTE:
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
On Resistance (Note 1)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Source to Drain Diode Voltage (Note 1)
Reverse Recovery Time
1. T
2. Pulse Test: Pulse width 300 s, Duty Cycle 2%.
T
T
(0.063in (1.6mm) from case for 10s)
C
C
= 100
J
= 25
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
o
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C to 150
PARAMETER
PARAMETER
o
C.
GS
= 20k
7-12
T
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
= 25
RFD8P06LE, RFD8P06LESM, RFP8P06LE
T
C
= 25
o
C Unless Otherwise Specified
o
C Unless Otherwise Specified
SYMBOL
SYMBOL
V
Q
r
T
BV
t
Q
DS(ON)
t
Q
d(OFF)
C
C
GS(TH)
V
R
R
C
I
I
d(ON)
t
C
g(TOT)
GSS
t
DSS
OFF
g(TH)
t
OSS
ON
g(-5)
RSS
SD
ISS
rr
DSS
t
t
= 25
r
f
JC
JA
o
C Unless Otherwise Specified
T
T
I
V
V
V
I
I
V
(Figure 13)
V
V
V
V
(Figure 15)
TO-251AA, TO-252AA
TO-220AB
D
D
D
J
J
GS
DS
GS
DD
GS
GS
GS
DS
= 25
= 25
= 250 A, V
= 8A, V
= 8A, V
=- 60V, V
=- 25V, V
= V
= 10V
= -30V, I
= 0 to -10V
= 0 to -5V
= 0 to -1V
o
o
C, I
C, I
DS
GS
GS
, I
SD
SD
D
D
= -5V (Figure 9, 10)
= -4.5V (Figure 9, 10)
GS
TEST CONDITIONS
GS
GS
=- 8A, V
=- 8A, dI
TEST CONDITIONS
= 250 A (Figure 12)
= 0V (Figure 11)
8A, R
= 0V
= 0V, f = 1MHz
J
, T
GS
GS
DGR
SD
STG
DM
DS
GS
AS
/dt = 100A/ s
= 0V
D
D
D
L
= 9.1 , R
T
T
V
R
I
(Figure 14)
g(REF)
J
J
DD
L
= 25
= 150
= 6
= -48V, I
o
= -0.2mA
L
C
o
C
= 3.75
RFD8P06LE, RFD8P06LESM,
D
8A,
See Figure 5
See Figure 6
RFP8P06LE
-55 to 175
MIN
0.32
-6.3
300
MIN
-60
-60
48
-60
-8
-
-
10
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
TYP
675
175
1.2
10
50
30
20
25
15
50
-
-
-
-
-
-
-
-
-
-
-
-
-
0.300
MAX
0.330
3.125
-1.5
125
MAX
100
-50
1.5
90
75
30
18
80
-2
-1
10
-
-
-
-
-
-
-
-
UNITS
W/
UNITS
UNITS
o
o
W
o
o
o
V
V
A
A
V
C
C
o
C/W
C/W
C/W
ns
nC
nC
nC
ns
ns
ns
ns
ns
ns
pF
pF
pF
V
V
V
C
A
A
A