RFD8P06LESM INTERSIL [Intersil Corporation], RFD8P06LESM Datasheet - Page 5

• Manufacturer Part Number: RFD8P06LESM
• Description: 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
• Manufacturer: INTERSIL [Intersil Corporation]

Typical Performance Curves
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
Test Circuits and Waveforms
VARY t
REQUIRED PEAK I
0V
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR
-60
-45
-30
-15
0
0.8
P
FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT
1.4
1.2
1.0
0.6
-80
TO OBTAIN
V
-V
20
t
GS
V
P
GS
DD
I
I
G(REF)
G(ACT)
= V
JUNCTION TEMPERATURE
CONSTANT GATE CURRENT
-40
=BV
AS
DS
DSS
, I
T
0.75 BV
0.50 BV
0.25 BV
D
J
, JUNCTION TEMPERATURE (
= -250 A
V
R
I
G(REF)
GS
0
L
R
= 7.5
t, TIME ( s)
G
DSS
DSS
DSS
= -5V
7-15
= -0.20mA
40
0.75 BV
0.50 BV
0.25 BV
RFD8P06LE, RFD8P06LESM, RFP8P06LE
V
80
DD
DSS
DSS
DSS
V
I
= BV
80
AS
DS
Unless Otherwise Specified
120
I
I
G(REF)
G(ACT)
DSS
DUT
o
C)
0.01
L
160
-5.00
-3.75
-2.50
-1.25
0.00
-
+
200
V
DD
0
FIGURE 15. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 13. SWITCHING TIME AS A FUNCTION OF GATE
1000
125
100
800
200
600
400
V
75
50
25
DD
FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
0
0
0
0
V
DD
= -30V, I
RESISTANCE
-10
R
GS
V
10
C
DS
C
C
, GATE TO SOURCE RESISTANCE ( )
I
OSS
RSS
ISS
D
AS
, DRAIN TO SOURCE VOLTAGE (V)
= -8A, R
-20
t
P
20
L
= 3.75
-30
BV
t
AV
DSS
30
V
C
C
C
-40
GS
ISS
RSS
OSS
V
= 0V, f = 0.1MHz
= C
DS
= C
C
40
GS
GD
DS
-50
t
t
t
f
+ C
t
d(OFF)
d(ON)
+ C
r
GD
GD
-60
50