PSMN004-36B NXP [NXP Semiconductors], PSMN004-36B Datasheet - Page 8

• Manufacturer Part Number: PSMN004-36B
• Description: N-channel TrenchMOS SiliconMAX logic level FET
• Manufacturer: NXP [NXP Semiconductors]

NXP Semiconductors
PSMN004-36B_2
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R
DS(on)
(Ω)
0.008
0.006
0.004
0.002
V
(V)
0.01
GS
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
I
V
T
D
T
j
DD
j
= 25 °C
= 75 A
= 25 °C
= 15 V
40
20
80
40
120
V
GS
60
160
All information provided in this document is subject to legal disclaimers.
= 2.6 V
I
Q
D
G
2.8 V
= (A)
03ag46
03ag50
10 V
(nC)
5 V
200
80
Rev. 02 — 1 March 2010
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
N-channel TrenchMOS SiliconMAX logic level FET
(pF)
C
a
10
10
10
1.5
0.5
2
1
0
5
4
3
−60
10
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
−1
0
1
PSMN004-36B
60
10
120
V
© NXP B.V. 2010. All rights reserved.
DS
T
C
C
C
(V)
j
( ° C)
iss
oss
rss
03aa27
03ag49
180
10
2
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