PSMN1R7-30YL_10 NXP [NXP Semiconductors], PSMN1R7-30YL_10 Datasheet - Page 2

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PSMN1R7-30YL_10

Manufacturer Part Number
PSMN1R7-30YL_10
Description
N-channel 30 V 1.7 m? logic level MOSFET in LFPAK
Manufacturer
NXP [NXP Semiconductors]
Datasheet
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
PSMN1R7-30YL
Product data sheet
Pin
1
2
3
4
mb
Type number
PSMN1R7-30YL
Symbol Description
S
S
S
G
D
Pinning information
Ordering information
source
source
source
gate
mounting base; connected to
drain
Table 1.
[1]
[2]
[3]
[4]
LFPAK
Package
Name
Symbol
Q
Avalanche ruggedness
E
DS(AL)R
G(tot)
Continuous current is limited by package.
Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
Quick reference data
Parameter
total gate charge
repetitive
drain-source
avalanche energy
Description
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 20 April 2010
Simplified outline
SOT669 (LFPAK)
Conditions
V
V
see
…continued
GS
DS
N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
Figure 3
1 2 3 4
= 4.5 V; I
= 12 V; see
mb
D
= 10 A;
Figure 17
Graphic symbol
PSMN1R7-30YL
[2][3][4]
mbb076
G
Min
-
-
© NXP B.V. 2010. All rights reserved.
D
S
Typ
36.2 -
-
Version
Max Unit
-
2 of 16
nC
J

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