NTD20N03L27-1 ONSEMI [ON Semiconductor], NTD20N03L27-1 Datasheet - Page 3

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NTD20N03L27-1

Manufacturer Part Number
NTD20N03L27-1
Description
Power MOSFET
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
NTD20N03L27-1G
Manufacturer:
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Quantity:
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Part Number:
NTD20N03L27-1G
Manufacturer:
ON Semiconductor
Quantity:
10
0.035
0.025
0.015
0.005
1.6
1.4
1.2
0.8
0.6
0.04
0.03
0.02
0.01
40
35
30
25
20
15
10
5
0
1
−50
0
0
2
I
V
Figure 3. On−Resistance vs. Drain Current and
D
V
GS
V
GS
0.2
= 10 A
GS
Figure 5. On−Resistance Variation with
−25
5
Figure 1. On−Region Characteristics
= 5 V
−V
= 8 V
V
= 5 V
GS
DS
0.4
T
8
J
, DRAIN−TO−SOURCE VOLTAGE (V)
= 10 V
, JUNCTION TEMPERATURE ( C)
0
I
12
D
0.6
, DRAIN CURRENT (AMPS)
15
25
Temperature
0.8
Temperature
T
J
T
T
18
T
= 25 C
J
J
J
V
V
50
= 100 C
= −55 C
1
= 25 C
GS
GS
22
= 5 V
= 6 V
1.2
V
75
25
GS
= 4.5 V
1.4
28 32
100
V
V
V
GS
GS
V
1.6
GS
GS
= 3.5 V
= 2.5 V
= 3 V
125
= 4 V
http://onsemi.com
35
1.8
NTD20N03L27
38
150
2
3
0.025
0.015
1000
0.02
0.01
0.03
100
40
36
32
28
24
20
16
12
10
8
4
0
1
0.5
0
0
Figure 4. On−Resistance vs. Drain Current and
V
T
Figure 6. Drain−to−Source Leakage Current
V
J
GS
DS
3
= 25 C
4
1
= 0 V
−V
> = 10 V
−V
Figure 2. Transfer Characteristics
DS
GS
1.5
8
6
T
, DRAIN−TO−SOURCE VOLTAGE (V)
J
, GATE−TO−SOURCE VOLTAGE (V)
I
D
= 25 C
, DRAIN CURRENT (AMPS)
12
9
2
T
Gate Voltage
J
12
16
vs. Voltage
T
T
= 100 C
2.5
J
J
= 125 C
= 100 C
V
V
15
GS
GS
20
= 5 V
T
= 10 V
3
J
18
24
= −55 C
3.5
21
28
4
24
32
4.5
36
27
40
30
5

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