NTD20N03L27-1 ONSEMI [ON Semiconductor], NTD20N03L27-1 Datasheet - Page 4

• Manufacturer Part Number: NTD20N03L27-1
• Description: Power MOSFET
• Manufacturer: ONSEMI [ON Semiconductor]

1000
2500
1500
1000
200
500
100
10
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
0
1
10
1
Figure 9. Resistive Switching Time Variation
8 6
t
t
d(on)
d(off)
4
Figure 7. Capacitance Variation
t
t
f
r
V
GS
2 0
R
G
− V
vs. Gate Resistance
, GATE RESISTANCE (W)
DS
2
C
4
rss
6
10
8
350
300
250
200
150
100
50
10 12
0
25
C
C
iss
oss
Figure 11. Maximum Avalanche Energy vs.
14
T
J
, STARTING JUNCTION TEMPERATURE ( C)
V
I
V
T
16 18 20 23
D
DS
GS
J
= 20 A
= 25 C
Starting Junction Temperature
50
= 20 V
= 5.0 V
http://onsemi.com
NTD20N03L27
100
25
75
4
12
10
20
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
0.0
100
0
Figure 10. Diode Forward Voltage vs. Current
V
T
Drain−to−Source Voltage vs. Total Charge
0.1
GS
J
Q
= 25 C
I
1
D
= 0 V
V
2
SD
= 24 A
0.2
125
Figure 8. Gate−to−Source and
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
0.3
4
0.4
150
6
Q
2
0.5
Q
8
0.6
0.7
10
V
GS
0.8
I
T
D
J
= 20 A
12
= 25 C
0.9
1.0
14