SPD09P06PLG INFINEON [Infineon Technologies AG], SPD09P06PLG Datasheet - Page 3

• Manufacturer Part Number: SPD09P06PLG
• Description: SIPMOS Power-Transistor Feature N-Channel Enhancement mode
• Manufacturer: INFINEON [Infineon Technologies AG]

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Rev 2.5
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
V
I
V
f=1MHz
V
I
V
I
V
V
V
T
V
V
di
D
D
D
Page 3
DS
GS
DD
DD
DD
DD
GS
DD
C
GS
R
F
=-5.4
=-5.4, R
=-5.4A, R
=25°C
=-30V, I
/dt=100A/µs
=0V, V
=-30V, V
=-30V, V
=-48V, I
=-48V, I
=0 to -10V
=-48V, I
=0V, I
2*I
Conditions
D
*R
G
F
F =
DS
G
=-9.7A
=6
DS(on)max
D
D
D
GS
GS
=6
l
=-9.7A
=-9.7A,
=-9.7A
S
=-25V,


,


=-4.5V,
=-4.5V,
,
min.
1.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
SPD09P06PL G
typ.
360
103
168
-4.1
-1.1
3.5
1.3
5.1
40
11
49
89
14
52
64
-
-
2008-07-29
max.
-38.8
450
130
252
134
-9.7
-1.4
7.5
50
17
74
21
76
96
2
-
-
Unit
S
pF
ns
nC
V
A
V
ns
nC