SPD09P06PLG INFINEON [Infineon Technologies AG], SPD09P06PLG Datasheet - Page 6

• Manufacturer Part Number: SPD09P06PLG
• Description: SIPMOS Power-Transistor Feature N-Channel Enhancement mode
• Manufacturer: INFINEON [Infineon Technologies AG]

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f (V
parameter: V
DS(on)
pF
0.75
0.55
0.45
0.35
0.25
0.15
0.05
10
10
10
0.6
0.5
0.4
0.3
0.2
0.1
0
-60
3
2
1
0
SPD09P06PL
DS
Rev 2.5
= f (T
)
-20
-5
D
GS
j
)
= -6.8 A, V
=0V, f=1 MHz
20
-10
98%
60
typ
-15
GS
100
= -10 V
-20
C
C
C
iss
oss
rss
140 °C
V
T
V
j
DS
200
-30
Page 6
10 Gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
-10
-10
-10
-10
2.4
V
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
-1
2
1
0
-60
2
1
0
0
= f (T j )
SD
SPD09P06PL
)
-0.4
-20
GS
-0.8
p
= V
= 80 µs
20
DS
-1.2
T
T
T
T
j
j
j
j
98 %
typ.
2 %
, I
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
60
D
-1.6
SPD09P06PL G
= -250 µA
100
-2
2008-07-29
-2.4
°C
V
V
T
SD
j
180
-3