k6e0808c1e-c Samsung Semiconductor, Inc., k6e0808c1e-c Datasheet - Page 4

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k6e0808c1e-c

Manufacturer Part Number
k6e0808c1e-c
Description
32kx8 Bit High-speed Cmos Static Ram 5v Operating . Operated At Commercial And Industrial Temperature Ranges.
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
K6E0808C1E-C/E-L, K6E0808C1E-I/E-P
TEST CONDITIONS
* The above test conditions are also applied at industrial temperature range.
Output Loads(A)
AC CHARACTERISTICS
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
D
255
OUT
Parameter
Parameter
(T
A
=0 to 70 C, V
+5V
480
30pF*
* Including Scope and Jig Capacitance
Symbol
t
t
t
t
t
t
t
t
OHZ
t
t
t
OLZ
RC
CO
OE
OH
PU
PD
AA
LZ
HZ
CC
=5.0V 10%, unless otherwise noted.)
K6E0808C1E-10
Min
10
3
0
0
0
3
0
-
-
-
-
- 4 -
.
Output Loads(B)
for t
Max
10
10
10
5
5
5
-
-
-
-
-
HZ
, t
LZ
, t
WHZ
K6E0808C1E-12
Min
12
3
0
0
0
3
0
-
-
-
-
, t
OW
D
255
OUT
, t
OLZ
See below
Max
0V to 3V
12
12
12
6
6
6
Value
-
-
-
-
-
& t
1.5V
3ns
OHZ
K6E0808C1E-15
Min
15
CMOS SRAM
3
0
0
0
3
0
-
-
-
-
+5.0V
480
5pF*
For Cisco
Max
15
15
15
7
7
7
-
-
-
-
-
Feburary 1999
Revision 2.0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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