k6e0808c1e-c Samsung Semiconductor, Inc., k6e0808c1e-c Datasheet - Page 8

• Manufacturer Part Number: k6e0808c1e-c
• Description: 32kx8 Bit High-speed Cmos Static Ram 5v Operating . Operated At Commercial And Industrial Temperature Ranges.
• Manufacturer: Samsung Semiconductor, Inc.

K6E0808C1E-C/E-L, K6E0808C1E-I/E-P
DATA RETENTION WAVE FORM
FUNCTIONAL DESCRIPTION
* X means Don t Care.
DATA RETENTION CHARACTERISTICS*
* The above parameters are also guaranteed at industrial temperature range.
Data Retention Characteristic is for L-Ver only.
V
Data Retention Current
Data Retention Set-Up Time
Recovery Time
CS controlled
CC
CS
H
L
L
L
V
4.5V
V
V
CS
GND
for Data Retention
CC
IH
DR
Parameter
WE
X
H
H
L
OE
X*
H
X
L
Symbol
t
t
V
I
SDR
RDR
DR
t
DR
SDR
Output Disable
Not Select
CS V
V
See Data Retention
Wave form(below)
Mode
V
Read
Write
IN
CC
(T
=3.0V, CS V
V
A
CC
CC
=0 to 70 C)
Test Condition
- 8 -
-0.2V
-0.2V or V
Data Retention Mode
CS V
CC
IN
-0.2V
CC
0.2V
- 0.2V
I/O Pin
High-Z
High-Z
D
D
OUT
IN
Min.
2.0
0
5
-
Typ.
-
-
-
-
CMOS SRAM
t
RDR
Supply Current
For Cisco
I
Max.
SB
5.5
0.5
-
-
I
I
I
, I
CC
CC
CC
Feburary 1999
SB1
Revision 2.0
Unit
mA
ms
ns
V