k6e0808c1e-c Samsung Semiconductor, Inc., k6e0808c1e-c Datasheet - Page 5

• Manufacturer Part Number: k6e0808c1e-c
• Description: 32kx8 Bit High-speed Cmos Static Ram 5v Operating . Operated At Commercial And Industrial Temperature Ranges.
• Manufacturer: Samsung Semiconductor, Inc.

K6E0808C1E-C/E-L, K6E0808C1E-I/E-P
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range
TIMMING DIAGRAMS
Write Cycle Time
Chip Select to End of Write
Address Setup Time
Address Valid to End of Write
Write Pulse Width(OE High)
Write Pulse Width(OE Low)
Write Recovery Time
Write to Output High-Z
Data to Write Time Overlap
Data Hold from Write Time
End Write to Output Low-Z
TIMING WAVEFORM OF READ CYCLE(1)
Address
Data Out
Parameter
Previous Valid Data
Symbol
t
t
t
t
t
t
t
t
t
WP1
WHZ
t
t
WC
CW
AW
WP
WR
DW
OW
AS
DH
(Address Controlled
K6E0808C1E-10
Min
10
10
8
0
8
8
0
0
5
0
0
- 5 -
t
.
AA
,
Max
CS=OE=V
5
-
-
-
-
-
-
-
-
-
-
t
RC
K6E0808C1E-12
IL
Min
, WE=V
12
12
9
0
9
9
0
0
6
0
0
IH
)
Max
6
-
-
-
-
-
-
-
-
-
-
Valid Data
K6E0808C1E-15
Min
15
10
10
10
15
CMOS SRAM
0
0
0
7
0
0
For Cisco
Max
7
-
-
-
-
-
-
-
-
-
-
Feburary 1999
Revision 2.0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns