PHT6N06 PHILIPS [NXP Semiconductors], PHT6N06 Datasheet - Page 4

• Manufacturer Part Number: PHT6N06
• Description: TrenchMOS transistor Standard level FET
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
September 1997
TrenchMOS
Standard level FET
ID% = 100 I
I
Fig.2. Normalised continuous drain current.
D
RDS(ON) = VDS/ID
120
110
100
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
& I
0
0
Fig.3. Safe operating area. T
ID/A
Fig.1. Normalised power dissipation.
0
0
100
DM
PD%
ID%
0.1
10
1
1
= f(V
PD% = 100 P
20
20
D
/I
D 25 ˚C
DS
); I
40
40
DC
transistor
= f(T
DM
single pulse; parameter t
60
60
10
Tmb / C
sp
D
Tmb / C
/P
); conditions: V
VDS/V
Normalised Current Derating
D 25 ˚C
80
80
Normalised Power Derating
100
100
= f(T
55
sp
tp =
1 us
10 us
100 us
1 ms
10 ms
100 ms
sp
= 25 ˚C
120
120
)
BUKX8150-55
GS
140
140
10 V
p
4
ID/A
Fig.5. Typical output characteristics, T
10
Fig.6. Typical on-state resistance, T
400 RDS(ON)mOhm
300
200
100
1E+02
3E+01
1E+01
3E+00
1E+00
8
6
4
2
0
3E-01
1E-01
3E-02
1E-02
0
0
16
10
0
1E-07
Fig.4. Transient thermal impedance.
Zth / (K/W)
1
0.05
0.02
Z
0.5
0.2
0.1
R
th j-sp
0
8
I
2
DS(ON)
2
D
= f(V
5
1E-05
= f(t); parameter D = t
3
= f(I
DS
4
); parameter V
4
D
5.5
); parameter V
5
ID/A
1E-03
t / s
6
6
P
D
6
7
Product specification
VGS/V =
t
1E-01
p
8
T
GS
PHT6N06T
GS
p
6.5
/T
BUKX8150-55
D =
9
j
8
j
= 25 ˚C .
= 25 ˚C .
T
t
p
t
10
Rev 1.000
1E+01
10
6.5
6.0
5.5
5.0
4.5
4.0
7
8
11
10