PHT6N06 PHILIPS [NXP Semiconductors], PHT6N06 Datasheet - Page 9
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PHT6N06
Manufacturer Part Number
PHT6N06
Description
TrenchMOS transistor Standard level FET
Manufacturer
PHILIPS [NXP Semiconductors]
Datasheet
1.PHT6N06.pdf
(10 pages)
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Philips Semiconductors
MECHANICAL DATA
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
2. Refer to surface mounting instructions for SOT223 envelope.
3. Epoxy meets UL94 V0 at 1/8".
September 1997
TrenchMOS
Standard level FET
Dimensions in mm
Net Mass: 0.11 g
damage to MOS gate oxide.
transistor
max
16
max
1.8
0.10
0.02
max
0.32
0.24
10
Fig.20. SOT223 surface mounting package.
13
1.05
0.85
9
1
2.3
6.7
6.3
3.1
2.9
4.6
0.80
0.60
2
4
3
A
B
0.1
(4x)
3.7
3.3
M
Product specification
B
7.3
6.7
PHT6N06T
0.2
Rev 1.000
M
A