PHT6N06 PHILIPS [NXP Semiconductors], PHT6N06 Datasheet - Page 5

• Manufacturer Part Number: PHT6N06
• Description: TrenchMOS transistor Standard level FET
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
September 1997
TrenchMOS
Standard level FET
Fig.9. Normalised drain-source on-state resistance.
I
a = R
ID/A
gfs/S
D
Fig.8. Typical transconductance, T
2.5
1.5
0.5
10
= f(V
3.5
2.5
1.5
8
6
4
2
0
2
1
-100
4
3
2
1
0
a
Fig.7. Typical transfer characteristics.
DS(ON)
GS
1
g
) ; conditions: V
1
fs
-50
/R
= f(I
2
DS(ON)25 ˚C
BUK98XX-55
2
D
); conditions: V
3
0
transistor
Tmb / degC
3
Tj/C =
4
= f(T
50
DS
5
4
Rds(on) normalised to 25degC
ID/A
j
VGS/V
); I
= 25 V; parameter T
150
D
6
100
= 5 A; V
5
DS
7
= 25 V
25
6
150
8
j
= 25 ˚C .
GS
= 10 V
7
9
200
10
8
j
5
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
350
300
250
200
150
100
50
V
Fig.12. Typical capacitances, C
0
0.01
-100
5
4
3
2
1
0
C = f(V
GS(TO)
I
D
0
VGS(TO) / V
= f(V
Fig.11. Sub-threshold drain current.
max.
min.
typ.
Fig.10. Gate threshold voltage.
= f(T
-50
GS)
DS
); conditions: V
; conditions: T
1
j
); conditions: I
0.1
0
2%
Tj / C
2
50
1
j
GS
= 25 ˚C; V
D
typ
VDS/V
= 1 mA; V
= 0 V; f = 1 MHz
Sub-Threshold Conduction
100
3
Product specification
iss
10
, C
PHT6N06T
150
98%
BUK78xx-55
DS
DS
oss
4
= V
, C
= V
Rev 1.000
200
GS
rss
GS
100
.
Ciss
Coss
Crss
5