STU1955NL SAMHOP [SamHop Microelectronics Corp.], STU1955NL Datasheet - Page 3

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STU1955NL

Manufacturer Part Number
STU1955NL
Description
N-Channel E nhancement Mode Field Effect Transistor
Manufacturer
SAMHOP [SamHop Microelectronics Corp.]
Datasheet
S T U/D1955NL
E LE CTR ICAL CHAR ACTE R IS TICS (T
Notes
d.Guaranteed when external R g=6 ohm and tf < tf max
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
a.S urface Mounted on FR 4 Board, t 10sec.
Diode Forward Voltage
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
1200
1000
800
600
400
200
Parameter
20
16
12
8
4
0
0
F igure 1. Output C haracteris tics
0
0
V
C rs s
G S
V
V
=10V
DS
F igure 3. C apacitance
0.5
DS
5
, Drain-to-S ource Voltage (V )
, Drain-to S ource Voltage (V )
10
1
V
V
G S
G S
=8V
15
1.5
=6V
C is s
20
2
S ymbol
V
V
V
G S
V
G S
G S
25
G S
2.5
=4.5V
V
=4V
=5V
=3V
S D
C os s
30
C
3
=25 C unless otherwise noted)
3
a
V
GS
Condition
F igure 4. On-R es is tance Variation with
= 0V, Is = 15A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
20
15
10
-55
5
0
F igure 2. Trans fer C haracteris tics
0
T j, J unction T emperature ( C )
Drain C urrent and Temperature
V
-25
V
G S
0.9
G S
I
D
=8A
=10V
, G ate-to-S ource Voltage (V )
0
1.8
25
2.7
Min Typ Max Unit
25 C
T j=125 C
50
3.6
75
1
100
4.5
-55 C
T j( C )
125
1.3
5.4
V

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