pbss4350z NXP Semiconductors, pbss4350z Datasheet - Page 3

• Manufacturer Part Number: pbss4350z
• Description: 50 V Low Vcesat Npn Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
3. For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
3. For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated
2003 May 13
V
V
V
I
I
I
P
T
T
T
R
SYMBOL
SYMBOL
C
CM
BM
stg
j
amb
CBO
CEO
EBO
tot
th j-a
50 V low V
Handbook” .
Handbook” .
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient in free air; notes 1 and 3
CEsat
PARAMETER
NPN transistor
PARAMETER
open emitter
open base
open collector
T
T
amb
amb
in free air; notes 2 and 3
3
25 C; notes 1 and 3
25 C; notes 2 and 3
CONDITIONS
CONDITIONS
65
65
MIN.
VALUE
62.5
92
60
50
6
3
5
1
1.35
2
+150
150
+150
PBSS4350Z
Product specification
MAX.
UNIT
K/W
K/W
V
V
V
A
A
A
W
W
C
C
C
2
2
2
2
.
.
.
.
UNIT