pbss4350z NXP Semiconductors, pbss4350z Datasheet - Page 6

• Manufacturer Part Number: pbss4350z
• Description: 50 V Low Vcesat Npn Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2003 May 13
handbook, halfpage
handbook, halfpage
(mA)
50 V low V
R CEsat
I C
V
(1) I
(2) I
(3) I
(4) I
Fig.6
I
(1) T
Fig.8
C
CE
( )
/I
1200
1000
10
10
B
800
600
400
200
10
10
= 5 V.
= 20.
B
B
B
B
10
amb
0
1
10
= 3.96 mA.
= 3.63 mA.
= 3.30 mA.
= 2.97 mA.
3
2
1
2
0
= 150 C.
Collector current as a function of
collector-emitter voltage; typical values.
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
1
0.4
1
CEsat
(5) I
(6) I
(7) I
(8) I
(2) T
0.8
B
B
B
B
10
= 2.64 mA.
= 2.31 mA.
= 1.98 mA.
= 1.65 mA.
amb
NPN transistor
= 25 C.
10
1.2
(1)
(3)
2
(9) I
(10) I
(11) I
(12) I
(2)
1.6
10
(3) T
B
B
B
B
I C (mA)
V CE (V)
3
= 1.32 mA.
= 0.99 mA.
= 0.66 mA.
= 0.33 mA.
MGW182
MGW179
amb
= 55 C.
10
2
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
(12)
4
6
handbook, halfpage
V
(1) I
(2) I
(3) I
(4) I
Fig.7
CE
(A)
I C
= 5 V.
B
B
B
B
5
4
3
2
1
0
= 150 mA.
= 135 mA.
= 120 mA.
= 105 mA.
0
Collector current as a function of
collector-emitter voltage; typical values.
0.4
(5) I
(6) I
(7) I
0.8
B
B
B
= 90 mA.
= 75 mA.
= 60 mA.
(1)
1.2
PBSS4350Z
Product specification
(8) I
(9) I
(10) I
1.6
V CE (V)
B
B
B
MGW180
= 45 mA.
= 30 mA.
= 15 mA.
2
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)