pbss5320t NXP Semiconductors, pbss5320t Datasheet - Page 2

• Manufacturer Part Number: pbss5320t
• Description: 20 V, 3 A Pnp Low Vcesat Biss Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
PNP low V
NPN complement: PBSS4320T.
MARKING
Note
1.
ORDERING INFORMATION
2004 Jan 15
PBSS5320T
PBSS5320T
TYPE NUMBER
Low collector-emitter saturation voltage V
corresponding low R
High collector current capability
High collector current gain
Improved efficiency due to reduced heat generation.
Power management applications
Low and medium power DC/DC convertors
Supply line switching
Battery chargers
Linear voltage regulation with low voltage drop-out
(LDO).
20 V, 3 A
PNP low V
= p: Made in Hong Kong.
= t: Made in Malaysia.
= W: Made in China.
TYPE NUMBER
CEsat
transistor in a SOT23 plastic package.
CEsat
CEsat
NAME
(BISS) transistor
MARKING CODE
plastic surface mounted package; 3 leads
ZH
CEsat
and
(1)
2
QUICK REFERENCE DATA
PINNING
handbook, halfpage
DESCRIPTION
V
I
I
R
SYMBOL
C
CRP
CEO
CEsat
PACKAGE
Fig.1
PIN
1
2
3
Top view
Simplified outline (SOT23) and symbol.
collector-emitter voltage
collector current (DC)
repetitive peak collector
current
equivalent on-resistance
base
emitter
collector
1
PARAMETER
3
DESCRIPTION
2
MAM256
Product specification
PBSS5320T
1
105
MAX.
20
2
3
VERSION
SOT23
3
2
V
A
A
m
UNIT