SQM85N15 VISHAY [Vishay Siliconix], SQM85N15 Datasheet - Page 4

• Manufacturer Part Number: SQM85N15
• Manufacturer: VISHAY [Vishay Siliconix]

TYPICAL CHARACTERISTICS (T
S11-2028-Rev. D, 17-Oct-11
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
0.20
0.16
0.12
0.08
0.04
3.0
2.5
2.0
1.5
1.0
0.5
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
www.vishay.com
I
D
= 30 A
2
V
0
GS
T
J
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
25
4
50
75
6
100
V
GS
A
200
190
180
170
160
150
T
Drain Source Breakdown vs. Junction Temperature
J
= 25 °C, unless otherwise noted)
= 10 V
T
- 50
125
= 150 °C
J
= 25 °C
8
I
150
- 25
D
= 10 mA
175
10
0
T
J
- Junction Temperature (°C)
25
50
4
75
100
0.001
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
0.01
100
1.0
0.5
0.1
10
125
0
1
- 50
0
www.vishay.com/doc?91000
150
- 25
Source Drain Diode Forward Voltage
0.2
T
175
J
= 150 °C
V
0
SD
- Source-to-Drain Voltage (V)
0.4
25
Threshold Voltage
T
J
- Temperature (°C)
50
0.6
SQM85N15-19
75
T
Vishay Siliconix
I
Document Number: 68668
J
D
0.8
100
= 25 °C
= 250 μA
125
1.0
I
D
= 5 mA
150
175
1.2