MT4C1M16C3 MICRON [Micron Technology], MT4C1M16C3 Datasheet - Page 8

• Manufacturer Part Number: MT4C1M16C3
• Description: FPM DRAM
• Manufacturer: MICRON [Micron Technology]

1 Meg x 16 FPM DRAM
D51_5V_B.p65 – Rev. B; Pub 3/01
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12; notes can be found on page 9); V
AC CHARACTERISTICS
PARAMETER
RAS# to WE# delay time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
WRITE command pulse width
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
SYMBOL
t
t
t
t
t
t
t
RWD
WCH
WRH
RWL
WCR
WCS
t
WRP
WP
t
T
8
MIN
67
13
38
2
8
0
5
8
8
CC
-5
(MIN) ≤ V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MAX
50
CC
≤ V
MIN
79
15
10
45
10
10
2
0
5
CC
(MAX)
-6
MAX
50
1 MEG x 16
FPM DRAM
UNITS
©2001, Micron Technology, Inc.
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
18, 27
18
36