M29W800DB STMICROELECTRONICS [STMicroelectronics], M29W800DB Datasheet - Page 16

• Manufacturer Part Number: M29W800DB
• Description: 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M29W800DT, M29W800DB
Table 5. Commands, 8-bit mode, BYTE = V
Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block.
Table 6. Program, Erase Times and Program, Erase Endurance Cycles
Note: 1. Typical values measured at room temperature and nominal voltages.
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Read/Reset
Auto Select
Program
Unlock Bypass
Unlock Bypass
Program
Unlock Bypass Reset
Chip Erase
Block Erase
Erase Suspend
Erase Resume
Read CFI Query
Chip Erase
Block Erase (64 Kbytes)
Erase Suspend Latency Time
Program (Byte or Word)
Chip Program (Byte by Byte)
Chip Program (Word by Word)
Program/Erase Cycles (per Block)
Data Retention
All values in the table are in hexadecimal.
The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A18, DQ8-DQ14 and DQ15 are Don’t
Care. DQ15A–1 is A–1 when BYTE is V
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V
4. Maximum value measured at worst case conditions for both temperature and V
Command
Parameter
6+
1
3
3
4
3
2
2
6
1
1
1
Addr Data
AAA
AAA
AAA
AAA
AAA
AAA
AA
X
X
X
X
X
1st
IL
AA
AA
AA
AA
AA
AA
F0
A0
B0
90
30
98
or DQ15 when BYTE is V
Addr
555
555
555
555
555
555
PA
X
2nd
IL
Data
PD
55
55
55
55
00
55
55
Addr
AAA
AAA
AAA
AAA
AAA
X
Bus Write Operations
IH
.
3rd
100,000
Min
20
Data
F0
A0
90
20
80
80
Addr
CC
CC
AAA
AAA
PA
.
after 100,00 program/erase cycles.
4th
Typ
Data
0.8
12
15
10
12
PD
AA
AA
6
(1, 2)
Addr
555
555
5th
Max
200
60
25
60
30
6
Data
(4)
55
55
(3)
(3)
(3)
(4)
(3)
(2)
Addr
AAA
BA
cycles
6th
years
Unit
µs
µs
s
s
s
s
Data
10
30