M29W800DB STMICROELECTRONICS [STMicroelectronics], M29W800DB Datasheet - Page 34

• Manufacturer Part Number: M29W800DB
• Description: 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M29W800DT, M29W800DB
Table 26. Device Geometry Definition
34/42
2Ah
2Bh
2Ch
2Dh
2Eh
3Ah
3Bh
3Ch
x16
27h
28h
29h
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
Address
5Ch
6Ch
4Eh
50h
52h
54h
56h
58h
5Ah
5Eh
60h
62h
64h
66h
68h
6Ah
6Eh
70h
72h
74h
76h
78h
x8
000Eh
0014h
0002h
0000h
0000h
0000h
0004h
0000h
0000h
0040h
0000h
0001h
0000h
0020h
0000h
0000h
0000h
0080h
0000h
0000h
0000h
0001h
Data
Device Size = 2
Flash Device Interface Code description
Maximum number of bytes in multi-byte program or page = 2
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing
contiguous Erase Blocks of the same size.
Region 1 Information
Number of identical size erase block = 0000h+1
Region 1 Information
Block size in Region 1 = 0040h * 256 byte
Region 2 Information
Number of identical size erase block = 0001h+1
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
Region 3 Information
Number of identical size erase block = 0000h+1
Region 3 Information
Block size in Region 3 = 0080h * 256 byte
Region 4 Information
Number of identical-size erase block = 000Eh+1
Region 4 Information
Block size in Region 4 = 0100h * 256 byte
n
in number of bytes
Description
n
16 Kbyte
32 Kbyte
64 Kbyte
1 MByte
8 Kbyte
x8, x16
Async.
Value
NA
15
4
1
2
1