ADF4150HVBCPZ AD [Analog Devices], ADF4150HVBCPZ Datasheet - Page 6

• Manufacturer Part Number: ADF4150HVBCPZ
• Description: High Voltage, Fractional-N
• Manufacturer: AD [Analog Devices]

ADF4150HV
ABSOLUTE MAXIMUM RATINGS
T
Table 3.
Parameter
AV
AV
V
Digital I/O Voltage to GND
Analog I/O Voltage to GND
REF
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Reflow Soldering
1
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
GND = CP
P
A
Peak Temperature
Time at Peak Temperature
DD
DD
to GND
= 25°C, unless otherwise noted.
IN
to GND
to DV
to GND
GND
1
DD
= SD
1
1
GND
= 0 V.
1
1
Rating
−0.3 V to +3.9 V
−0.3 V to +0.3 V
−0.3 V to +33 V
−0.3 V to AV
−0.3 V to DV
−0.3 V to AV
−40°C to +85°C
−65°C to +125°C
150°C
260°C
40 sec
DD
DD
DD
+ 0.3 V
+ 0.3 V
+ 0.3 V
Rev. 0 | Page 6 of 28
TRANSISTOR COUNT
The transistor count for the
and 809 (bipolar).
THERMAL RESISTANCE
Thermal impedance (θ
exposed pad soldered to GND.
Table 4. Thermal Resistance
Package Type
32-Lead LFCSP (CP-32-11)
ESD CAUTION
JA
) is specified for a device with the
ADF4150HV
θ
27.3
JA
is 23,380 (CMOS)
Unit
°C/W