PIC12F683-E/MD MICROCHIP [Microchip Technology], PIC12F683-E/MD Datasheet - Page 117
PIC12F683-E/MD
Manufacturer Part Number
PIC12F683-E/MD
Description
8-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology
Manufacturer
MICROCHIP [Microchip Technology]
Datasheet
1.PIC12F683-EMD.pdf
(176 pages)
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15.0
Absolute Maximum Ratings
Ambient temperature under bias..........................................................................................................-40° to +125°C
Storage temperature ........................................................................................................................ -65°C to +150°C
Voltage on V
Voltage on MCLR with respect to Vss ............................................................................................... -0.3V to +13.5V
Voltage on all other pins with respect to V
Total power dissipation
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, I
Maximum output current sunk by any I/O pin.................................................................................................... 25 mA
Maximum output current sourced by any I/O pin .............................................................................................. 25 mA
Maximum current sunk by GPIO ...................................................................................................................... 90 mA
Maximum current sourced GPIO...................................................................................................................... 90 mA
Note 1:
© 2007 Microchip Technology Inc.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure above maximum rating conditions for
extended periods may affect device reliability.
ELECTRICAL SPECIFICATIONS
Power dissipation is calculated as follows: P
DD
with respect to V
IK
(1)
OK
(V
DD
............................................................................................................................... 800 mW
SS
I
(Vo < 0 or Vo >V
< 0 or V
pin ......................................................................................................................... 95 mA
pin ...................................................................................................................... 95 mA
SS
I
> V
(†)
................................................................................................... -0.3V to +6.5V
DD
SS
)...............................................................................................................± 20 mA
DD
........................................................................... -0.3V to (V
).........................................................................................................± 20 mA
DIS
= V
DD
x {I
DD
– ∑ I
OH
} + ∑ {(V
DD
PIC12F683
– V
OH
) x I
DS41211D-page 115
OH
} + ∑(V
DD
+ 0.3V)
O
l x I
OL
).
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