BGD885_01 NXP [NXP Semiconductors], BGD885_01 Datasheet

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage BGD885 860 MHz gain power doubler amplifier Product specification Supersedes data of 2001 Oct 25 M3D248 2001 Nov 02 ...

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Philips Semiconductors 860 MHz gain power doubler amplifier FEATURES Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction Gold metallization ensures excellent reliability. DESCRIPTION Hybrid amplifier module for CATV/MATV systems operating over a frequency range of 40 ...

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Philips Semiconductors 860 MHz gain power doubler amplifier CHARACTERISTICS Table 1 Bandwidth 40 to 860 MHz; V SYMBOL PARAMETER G power gain p SL slope cable equivalent FL flatness of frequency response S input return losses 11 S ...

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Philips Semiconductors 860 MHz gain power doubler amplifier input List of components (see Fig.2) COMPONENT C1 ceramic multilayer capacitor C2 ceramic multilayer capacitor R resistor 2001 Nov 02 BGD885 ...

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Philips Semiconductors 860 MHz gain power doubler amplifier PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes 6-32 UNC and 2 extra horizontal mounting holes; 9 gold-plated in-line leads ...

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Philips Semiconductors 860 MHz gain power doubler amplifier DATA SHEET STATUS PRODUCT (1) DATA SHEET STATUS STATUS Objective data Development Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating ...

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Philips Semiconductors 860 MHz gain power doubler amplifier 2001 Nov 02 NOTES 7 Product specification BGD885 ...

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Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited ...