M24256-BF STMICROELECTRONICS [STMicroelectronics], M24256-BF Datasheet - Page 25

• Manufacturer Part Number: M24256-BF
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M24256-BF, M24256-BR, M24256-BW, M24256-DR
Table 12.
1. Sampled only, not 100% tested.
2. E2,E1,E0: Input impedance when the memory is selected (after a Start condition).
Table 13.
1. Characterized value, not tested in production.
2. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the
Symbol
Symbol
I
I
V
V
Z
I
I
Z
CC0
CC1
V
completion of the internal write cycle t
I
CC
C
C
LO
OL
LI
H
L
IH
IL
IN
IN
(2)
(2)
Input leakage current
(SCL, SDA, E0, E1,
E2)
Output leakage
current
Supply current (Read)
Supply current (Write) During t
Standby supply
current
Input low voltage
(SCL, SDA, WC)
Input high voltage
(SCL, SDA)
Input high voltage
(WC, E0, E1, E2)
Output low voltage
Input capacitance (SDA)
Input capacitance (other pins)
Input impedance
(E2, E1, E0, WC)
Input impedance
(E2, E1, E0, WC)
Input parameters
DC characteristics (voltage range W)
Parameter
Parameter
(1)
Doc ID 6757 Rev 21
V
device in Standby mode
SDA in Hi-Z, external voltage applied
on SDA: V
V
(rise/fall time < 50 ns)
V
(rise/fall time < 50 ns)
Device not selected
V
= 2.5 V
V
I
OL
IN
CC
CC
IN
IN
Test conditions (see
W
= 2.1 mA, V
= V
= V
= V
= 2.5 V, f
= 5.5 V, f
(t
W
SS
SS
SS
W
is triggered by the correct decoding of a Write instruction).
, 2.5 V < V
or V
or V
or V
SS
c
c
or V
CC
CC
CC
Test condition
Table
= 400 kHz
= 400 kHz
V
V
CC
, V
, V
IN
IN
CC
= 2.5 V
(2)
CC
< 0.3V
> 0.7V
CC
CC
11)
,
= 5.5 V
< 5.5 V
Device grade 3
Device grade 6
Table 8
CC
CC
and
Min.
500
30
DC and AC parameters
0.7V
0.7V
–0.45
Min.
CC
CC
Max.
8
6
V
0.3V
CC
Max.
5
± 2
± 2
6.5
0.4
1
2
5
2
5
(1)
+0.6
CC
Unit
k
k
pF
pF
Unit
25/42
mA
mA
mA
µA
µA
µA
µA
V
V
V