NAND04GW3B2AN1F NUMONYX [Numonyx B.V], NAND04GW3B2AN1F Datasheet - Page 30

• Manufacturer Part Number: NAND04GW3B2AN1F
• Description: 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
• Manufacturer: NUMONYX [Numonyx B.V]

Device operations
6.9
Table 10.
Table 11.
30/58
NAND04GW3B2B
NAND08GW3B2A
Root Part
Number
I/O1-I/O0
I/O3-I/O2
I/O5-I/O4
I/O6
I/O7
I/O
Read Electronic Signature
The device contains a Manufacturer Code and Device Code. To read these codes three steps
are required:
1.
2.
3.
Electronic Signature
Electronic Signature Byte 3
One Bus Write cycle to issue the Read Electronic Signature command (90h)
One Bus Write cycle to input the address (00h)
Four Bus Read Cycles to sequentially output the data (as shown in
Signature).
Manufacturer Code
Number of simultaneously
Interleaved Programming
between multiple devices
Byte 1
Internal Chip number
20h
20h
programmed pages
Cache Program
Definition
Cell Type
Device code
Byte 2
DCh
D3h
Value
(see
0 0
0 1
1 0
1 1
0 1
1 0
1 1
0 0
0 1
1 0
1 1
0 0
0
1
0
1
Byte 3
NAND04GW3B2B, NAND08GW3B2A
Table
80h
81h
11)
Not supported
Not supported
Table 10: Electronic
Description
(see
16-level cell
2-level cell
4-level cell
8-level cell
Supported
Supported
Byte 4
Table
95h
95h
1
2
4
8
1
2
4
8
12)