CY14B101LA CYPRESS [Cypress Semiconductor], CY14B101LA Datasheet - Page 13

• Manufacturer Part Number: CY14B101LA
• Description: 1 Mbit (128K x 8/64K x 16) nvSRAM
• Manufacturer: CYPRESS [Cypress Semiconductor]

AutoStore/Power Up RECALL
Switching Waveforms
Notes
Document #: 001-42879 Rev. *C
Parameters
t
t
t
V
t
V
t
t
22. t
23. If an SRAM write has not taken place since the last nonvolatile cycle, no AutoStore or Hardware STORE takes place.
24. On a Hardware Store and AutoStore initiation, SRAM write operation continues to be enabled for time t
25. Read and Write cycles are ignored during STORE, RECALL, and while VCC is below V
26. HSB pin is driven high to VCC only by internal 100 kΩ resistor, HSB driver is disabled.
HRECALL
STORE
DELAY
VCCRISE
LZHSB
HHHD
SWITCH
HDIS
HRECALL
[13]
[13]
[13]
[24]
[23]
[13]
[27]
Read & Write
starts from the time V
Inhibited
(
Power Up RECALL Duration
STORE Cycle Duration
Time Allowed to Complete SRAM Write Cycle
Low Voltage Trigger Level
VCC Rise Time
HSB Output Disable Voltage
HSB To Output Active Time
HSB High Active Time
RWI
POWER-
AutoStore
RECALL
HSB OUT
V
UP
SWITCH
V
)
HDIS
V
CC
CC
POWER-UP
RECALL
rises above V
Description
V
VCCRISE
SWITCH.
Figure 11. AutoStore or Power Up RECALL
Read & Write
t
t
t
HHHD
LZHSB
HRECALL
PRELIMINARY
Note
AutoStore
BROWN
t
DELAY
23
OUT
Min
150
t
STORE
20 ns
POWER-UP
RECALL
SWITCH.
Max
2.65
500
1.9
20
20
8
5
t
HRECALL
DELAY
t
t
HHHD
LZHSB
Min
150
Read & Write
CY14B101LA, CY14B101NA
[27]
.
25 ns
t
DELAY
Max
2.65
500
1.9
20
25
8
5
Note
AutoStore
POWER
DOWN
23
Min
150
t
Note
STORE
45 ns
26
Max
2.65
500
1.9
Page 13 of 24
20
25
8
5
Unit
ms
ms
ns
µs
µs
ns
V
V
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