LH28F160S5-L SHARP [Sharp Electrionic Components], LH28F160S5-L Datasheet - Page 11

• Manufacturer Part Number: LH28F160S5-L
• Description: 16 M-bit (2 MB x 8/1 MB x 16) Smart 5 Flash Memories (Fast Programming)
• Manufacturer: SHARP [Sharp Electrionic Components]

NOTES :
1. Refer to Section 6.2.3
2. X can be V
3. STS is V
Read
Output Disable
Standby
Deep Power-Down
Read Identifier
Codes
Query
Write
Read
Output Disable
Standby
Deep Power-Down
Read Identifier
Codes
Query
Write
When V
not altered.
V
CHARACTERISTICS
WSM is executing internal block erase, full chip erase,
(multi) word/byte write or block lock-bit configuration
algorithms. It is floated during when the WSM is not
busy, in block erase suspend mode with (multi)
word/byte write inactive, (multi) word/byte write suspend
mode, or deep power-down mode.
PPLK
MODE
MODE
or V
PP
OL
≤ V
IL
PPH1
(if configured to RY/BY# mode) when the
or V
PPLK
IH
for V
, memory contents can be read, but
for control pins and addresses, and
1, 2, 3, 9
3, 7, 8, 9
1, 2, 3, 9
3, 7, 8, 9
"
NOTE
NOTE
for V
3
3
4
9
9
3
3
4
9
9
PP
"
. See Section 6.2.3
DC CHARACTERISTICS
PPLK
RP#
RP#
and V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IH
IH
IH
IH
IH
IH
IH
IH
IH
IH
IH
IL
IL
Table 2.1 Bus Operations (BYTE# = V
Table 2.2 Bus Operations (BYTE# = V
PPH1
CE
CE
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
voltages.
X
X
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
0
0
#
#
"
CE
CE
DC
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
"
X
X
- 11 -
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
.
1
1
#
#
4. RP# at GND±0.2 V ensures the lowest deep power-
5. See Section 4.2 for read identifier code data.
6. See Section 4.5 for query data.
7. Command writes involving block erase, full chip erase,
8. Refer to Table 3 for valid D
9. Don’t use the timing both OE# and WE# are V
OE#
OE#
V
V
V
V
V
V
V
V
V
V
X
X
X
X
IH
IH
IH
IH
IL
IL
IL
IL
IL
IL
down current.
(multi) word/byte write or block lock-bit configuration are
reliably executed when V
WE#
WE#
V
V
V
V
V
V
V
V
V
V
X
X
X
X
IH
IH
IH
IH
IH
IH
IH
IH
IL
IL
IH
IL
6 through 10
6 through 10
See Table
See Table
ADDRESS
ADDRESS
)
)
Fig. 2
Fig. 2
See
See
X
X
X
X
X
X
X
X
X
X
PP =
LH28F160S5-L/S5H-L
IN
V
V
V
during a write operation.
X
X
X
X
X
X
X
X
X
X
X
X
X
X
PP
PP
PPH1
and V
(NOTE 5) High Z
(NOTE 6) High Z
(NOTE 5) High Z
(NOTE 6) High Z
DQ
High Z
High Z
High Z
High Z
High Z
High Z
DQ
D
D
D
D
OUT
OUT
0-15
IN
IN
0-7
CC =
IL
V
High Z
High Z
.
CC1/2
STS
STS
X
X
X
X
X
X
X
X
.