LH28F160S5-L SHARP [Sharp Electrionic Components], LH28F160S5-L Datasheet - Page 50

• Manufacturer Part Number: LH28F160S5-L
• Description: 16 M-bit (2 MB x 8/1 MB x 16) Smart 5 Flash Memories (Fast Programming)
• Manufacturer: SHARP [Sharp Electrionic Components]

6.2.8 BLOCK ERASE, FULL CHIP ERASE, (MULTI) WORD/BYTE WRITE AND
NOTES :
1. Typical values measured at T
2. Excludes system-level overhead.
SYMBOL
• V
t
t
t
t
t
t
t
t
t
t
t
t
t
t
WHQV1
EHQV1
WHQV1
EHQV1
WHQV2
EHQV2
WHQV3
EHQV3
WHQV4
EHQV4
WHRH1
EHRH1
WHRH2
EHRH2
CC
voltages. Assumes corresponding block lock-bits are not
set. Subject to change based on device characterization.
= 5.0±0.25 V, 5.0±0.5 V, T
BLOCK LOCK-BIT CONFIGURATION PERFORMANCE
Word/Byte Write Time (using W/B write, in word mode)
Word/Byte Write Time (using W/B write, in byte mode)
Word/Byte Write Time (using multi word/byte write)
Block Write Time (using W/B write, in word mode)
Block Write Time (using W/B write, in byte mode)
Block Write Time (using multi word/byte write)
Block Erase Time
Full Chip Erase Time
Set Block Lock-Bit Time
Clear Block Lock-Bits Time
Write Suspend Latency Time to Read
Erase Suspend Latency Time to Read
PARAMETER
A
A
= +25°C and nominal
= 0 to +70°C or
–40 to +85°C
- 50 -
3. These performance numbers are valid for all speed
4. Sampled, not 100% tested.
versions.
NOTE
2
2
2
2
2
2
2
2
2
(NOTE 3, 4)
MIN.
V
CC
TYP.
LH28F160S5-L/S5H-L
= 5.0±0.5 V
0.31
0.61
0.34
10.9
9.24
0.34
9.24
9.24
0.13
5.6
9.4
(NOTE 1)
2
MAX.
TBD
TBD
TBD
TBD
TBD
TBD
13.1
3.7
7.5
1.5
10
7
UNIT
µs
µs
µs
µs
µs
µs
s
s
s
s
s
s