HYB18M512160BF-7.5 QIMONDA [Qimonda AG], HYB18M512160BF-7.5 Datasheet - Page 18

• Manufacturer Part Number: HYB18M512160BF-7.5
• Description: DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
• Manufacturer: QIMONDA [Qimonda AG]

3) Input slew rate is 1.0 V/ns.
4) Definitions for IDD:
5) All parameters are measured with no output loads.
6) I
Table 15
Parameter & Test Conditions
Self Refresh Current:
Self refresh mode,
full array activation
(PASR = 000)
Self Refresh Current:
Self refresh mode,
half array activation
(PASR = 001)
Self Refresh Current:
Self refresh mode,
quarter array activation
(PASR = 010)
1) 0 C
2) The On-Chip Temperature Sensor (OCTS) adjusts the refresh rate in self refresh mode to the component’s actual
3) For commercial temperature range part (HYB), the max. value indicated for 85°C applies to 70°C.
Internet Data Sheet
LOW is defined as V
HIGH is defined as V
STABLE is defined as inputs stable at a HIGH or LOW level;
SWITCHING is defined as:
- address and command: inputs changing between HIGH and LOW once per two clock cycles;
- data bus inputs: DQ changing between HIGH and LOW once per clock cycle; DM and DQS are STABLE
temperature with a much finer resolution than supported by the 4 imperature levels as defined by JEDEC for TCSR. At
production test the sensor is calibrated, and IDD6 max. current is measured at 85°C. Typ. values are obtained from device
characterization.
DD8
current is typical.
T
C
Self Refresh Currents
70 C (comm.); -25 C
IN
IN
0.9 * V
0.1 * V
DDQ
Temperature
DDQ
;
T
;
85 C
70 C
45 C
25 °C
85 C
70 C
45 °C
25 C
85 C
70 C
45 C
25 °C
Max.
C
85 C (ext.);
Symbol
V
I
DD6
DD
18
=
V
DDQ
=
1.70 V - 1.90 V.
typ.
710
510
320
280
540
370
240
210
420
290
210
170
Values
512-Mbit DDR Mobile-RAM
max.
900
780
670
HY[B/E]18M512160BF
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–
–
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Electrical Characteristics
07092007-3E44-UTNM
Rev.1.80, 2006-11
Units
A
Notes
1)2)3)
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