HYB18T512160AF INFINEON [Infineon Technologies AG], HYB18T512160AF Datasheet - Page 25

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HYB18T512160AF

Manufacturer Part Number
HYB18T512160AF
Description
512-Mbit DDR2 SDRAM
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HYB18T512160AF
Manufacturer:
Infineon
Quantity:
885
Part Number:
HYB18T512160AF-15
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Figure 5
Note:
1. 64Mb 8 Organisation with 14 Row, 2 Bank and 10
2. This Functional Block Diagram is intended to
Data Sheet
Column External Adresses
facilitate user understanding of the operation of the
Block Diagram 16 Mbit
8 I/O 4 Internal Memory Banks
25
3. DM is a unidirectional signal (input only), but is
device; it does not represent an actual circuit
implementation.
internally loaded to match the load of the
bidirectional DQ and DQS signals.
HYB18T512[40/80/16]0AF–[3/3S/3.7/5]
Pin Configuration and Block Diagrams
512-Mbit DDR2 SDRAM
09112003-SDM9-IQ3P
Rev. 1.3, 2005-01

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