STM8S105C4B3 STMICROELECTRONICS [STMicroelectronics], STM8S105C4B3 Datasheet - Page 78
STM8S105C4B3
Manufacturer Part Number
STM8S105C4B3
Description
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
1.STM8S105C4B3.pdf
(127 pages)
- Current page: 78 of 127
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Electrical characteristics
10.3.4
78/127
(4)
MHz oscillation is reached. This value is measured for a standard crystal resonator and it can vary
significantly with the crystal manufacturer.
t
SU(HSE)
is the start-up time measured from the moment it is enabled (by software) to a stabilized 16
HSE oscillator critical g
g
R
L
C
Co: Shunt capacitance (see crystal specification)
C
g
Internal clock sources and timing characteristics
Subject to general operating conditions for V
High speed internal RC oscillator (HSI)
Symbol
f
ACC
mcrit
m
m
HSI
m
m
L1
: Notional inductance (see crystal specification)
: Notional resistance (see crystal specification)
: Notional capacitance (see crystal specification)
>> g
= C
= (2 × Π × f
HSI
L2
mcrit
Parameter
= C: Grounded external capacitance
Frequency
Accuracy of HSI
oscillator
R m
C m
L m
Resonator
HSE
C O
)
2
× R
Figure 20: HSE oscillator circuit diagram
Table 34: HSI oscillator characteristics
m
m
(2Co + C)
equation
C L1
C L2
DocID14771 Rev 9
Conditions
User-trimmed with
CLK_HSITRIMR register
for given V
conditions
2
Resonator
(1)
DD
OSCOUT
DD
OSCIN
and T
and T
A
A
.
Min
R F
g m
Consumption
control
f HSE to core
Typ
16
STM8
Max
1.0
STM8S105xx
(2)
Unit
MHz
%
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