BSP75N_08 INFINEON [Infineon Technologies AG], BSP75N_08 Datasheet - Page 4

• Manufacturer Part Number: BSP75N_08
• Description: Smart Lowside Power Switch
• Manufacturer: INFINEON [Infineon Technologies AG]

Absolute Maximum Ratings
T
Parameter
Continuous drain source voltage
Drain source voltage for
short circuit protection
Continuous input voltage
Peak input voltage
Continuous Input Current
-0.2V ≤
V
Operating temperature range
Storage temperature range
Power dissipation (DC)
Unclamped single pulse inductive energy
Load dump protection
IN = low or high (8 V);
IN = high (8 V);
Electrostatic discharge voltage (Human
Body Model)
according to MIL STD 883D, method
3015.7 and EOS/ESD assn. standard
S5.1 - 1993
Thermal Resistance
Junction soldering point
Junction - ambient
1)
2)
3)
4)
Data Sheet Rev. 1.4
j
IN
= 25 °C, unless otherwise specified
See also
V
R
Device on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm
<-0.2V or
LoadDump
I
= internal resistance of the load dump test pulse generator LD200.
V
IN
Figure 7
is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839. See also
≤ 10V
V
IN
R
>10V
and
L
4)
= 22 Ω
Figure
2)
R
L
= 50 Ω
10.
1)
Symbol
V
V
V
V
I
T
T
P
E
V
V
R
R
4
IN
j
stg
DS
DS
IN
IN
tot
AS
LoadDump
ESD
thJS
thJA
2
copper area for pin 4 connection.
Values
60
36
-0.2 … +10 V
-0.2 … +20 V
no limit
|
-40 … +150
-55 … +150
1.8
550
80
47
4000
≤ 10
≤ 70
I
IN
|≤ 2mA
HITFET
Unit Remarks
V
V
mA –
°C
°C
W
mJ
V
V
K/W –
K/W –
–
–
–
–
–
–
I
V
V
V
V
R
t
–
d
D(ISO)
bb
LoadDump
P
P
I

3)
= 400 ms;
+
= 13.5 V
BSP 75N
=32V
2008-07-10
= 2 Ω;
V
= 0.7 A;
S
;
page
=
7.