BSP75N_08 INFINEON [Infineon Technologies AG], BSP75N_08 Datasheet - Page 7

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BSP75N_08

Manufacturer Part Number
BSP75N_08
Description
Smart Lowside Power Switch
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
EMC-Characteristics
The following EMC-Characteristics outline the behavior of typical devices. They are not
part of any production test.
Table 1
Parameter
Temperature
Supply Voltage
Load
Operation mode
DUT specific
Fast electrical transients
acc. to ISO 7637
1)
Definition of functional status
Data Sheet Rev. 1.4
Test
Pulse
The test pulses are applied at V
3a
3b
Class
1
2
4
5
C
E
1)
+200V
+200V
-200V
-200V
Level
175V
Max.
Test
Test Conditions
-7V
Content
All functions of the device are performed as designed after exposure to
disturbance.
One or more function of a device does not perform as designed after
exposure and can not be returned to proper operation without repairing
or replacing the device. The value after the character shows the limit.
Test Result
S
E(65V)
ON
C
C
C
C
C
OUT
Symbol
T
V
R
PWM
DC
V
A
S
IN
L
(’HIGH’)=5V
x
stressed
7
Value
23 ±5
13.5
27
E(75V)
OFF
C
C
C
C
C
Unit
°C
V
HITFET
Pulse Cycle Time
ohmic
f
ON / OFF
and Generator
Remark
INx
500ms ; 10Ω
500ms ; 10Ω
100ms ; 50Ω
100ms ; 50Ω
Impedance
400ms ; 2Ω
=100Hz, D=0.5
0.01Ω
BSP 75N
2008-07-10

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