TPS830F TOSHIBA [Toshiba Semiconductor], TPS830F Datasheet - Page 5

• Manufacturer Part Number: TPS830F
• Description: Si Monolithic Photo−IC
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Radiation angle
90°
80°
70°
0.2
1.6
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
1.4
60°
0
500
0
−50
50°
40°
600
−25
30°
Ambient temperature Ta (°C)
700
20°
Wave length λ (nm)
Spectral Response
0
10°
800
Radiation Pattern
Characteristics
I
CC
Relative transmission range
0°
0
25
– Ta
900
10°
0.2
50
20°
1000
0.4
V CC = 5 V
30°
Vertical
(Ta = 25°C)
I CCL
I CCH
0.6
1100
75
(typ.)
(typ.)
(typ.)
40°
0.8
50°
1200
100
60°
70°
1.0
80°
90°
5
Radiation angle
90°
80°
70°
1.2
1.0
0.8
0.6
0.4
0.2
−1
−2
−3
−4
−5
60°
0
0
−40
50°
f 0 − 60
40°
f 0 − 40 f 0 − 20
−20
30°
Ambient temperature Ta (°C)
20°
Carrier Frequency
Characteristics
0
Frequency (kHz)
Relative L – Ta
10°
Characteristics
Radiation Pattern
f 0
Relative transmission range
0°
20
0
f 0 + 20 f 0 + 40 f 0 + 60
10°
0.2
40
20°
0.4
V CC = 5 V
(typ.)
30°
(Ta = 25°C)
0.6
Horizontal
(typ.)
60
TPS830(F)
(typ.)
40°
2007-10-01
0.8
50°
80
60°
1.0
70°
80°
90°