FLC157XP EUDYNA [Eudyna Devices Inc], FLC157XP Datasheet

FLC157XP

Manufacturer Part Number

FLC157XP

Description

GaAs FET & HEMT Chips

Manufacturer

EUDYNA [Eudyna Devices Inc]

Datasheet

1.FLC157XP.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FLC157XP

Manufacturer:

M/A-COM

Quantity:

5 000

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ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)

Edition 1.3

July 1999

FEATURES

• High Output Power: P 1dB = 31.5dBm (Typ.)

• High Gain: G 1dB = 6.0dB(Typ.)

• High PAE: η add = 29.5%(Typ.)

• Proven Reliability

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:

DESCRIPTION

The FLC157XP chip is a power GaAs FET that is designed for

general purpose applications in the C-Band frequency range as it

provides superior power, gain, and efficiency.

Fujitsu’s stringent Quality Assurance Program assures the highest

reliability and consistent performance.

Thermal Resistance

Saturated Drain Current

Transconductance

Pinch-off Voltage

Gate Source Breakdown Voltage

Output Power at 1dB

Gain Compression Point

Power Gain at 1dB

Gain Compression Point

Power-added Efficiency

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.

1. The drain-source operating voltage (V DS ) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 9.6 and -1.0 mA respectively with

3. The operating channel temperature (T ch ) should not exceed 145°C.

gate resistance of 200Ω.

Item

Symbol

V GSO

I DSS

G 1dB

P 1dB

η add

R th

g m

V p

Symbol

V GS

V DS

T stg

P tot

T ch

Channel to Case

V DS = 5V, V GS = 0V

V DS = 5V, I DS = 400mA

V DS = 5V, I DS = 30mA

I GS = -30µA

V DS = 10V

I DS ≈ 0.6I DSS

f = 8GHz

Test Conditions

T c = 25°C

Condition

GaAs FET & HEMT Chips

30.5

Min.

-1.0

150

5.0

-5

-65 to +175

Rating

Limit

31.5

29.5

Typ.

-2.0

600

300

175

6.0

8.3

-5

FLC157XP

Drain

Gate

Max.

900

-3.5

Source

Drain

°C/W

dBm

Unit

°C

Related parts for FLC157XP

FLC157XP Summary of contents

Page 1

... High PAE: η add = 29.5%(Typ.) • Proven Reliability DESCRIPTION The FLC157XP chip is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25° ...

Page 2

... FLC157XP GaAs FET & HEMT Chips POWER DERATING CURVE 100 Case Temperature (°C) OUTPUT POWER vs. INPUT POWER V DS =10V 32 f=4GHz I DS ≈0.6I DSS out 26 f=4GHz 24 22 η add Input Power (dBm) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE ...

Page 3

... Download S-Parameters, click here 3 FLC157XP S22 MAG ANG .185 -39.7 .293 -115.6 .337 -139.9 .375 -150.6 .413 -152.6 .456 -153.5 .503 -154.9 .550 -156.8 .597 -159.3 .641 -162.2 .682 -165.4 ...

Page 4

... FLC157XP GaAs FET & HEMT Chips 155 For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...

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