FLC257MH-6 EUDYNA [Eudyna Devices Inc], FLC257MH-6 Datasheet

FLC257MH-6

Manufacturer Part Number

FLC257MH-6

Description

C-Band Power GaAs FET

Manufacturer

EUDYNA [Eudyna Devices Inc]

Datasheet

1.FLC257MH-6.pdf (4 pages)

Available stocks

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Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FLC257MH-6

Manufacturer:

Sumitomo

Quantity:

1 400

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FLC257MH-6*1

Manufacturer:

Eudyna

Quantity:

5 000

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Edition 1.1

July 1999

CASE STYLE: MH

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

FEATURES

• High Output Power: P 1dB = 34.0dBm(Typ.)

• High Gain: G 1dB = 9.0dB(Typ.)

• High PAE: η add = 36%(Typ.)

• Proven Reliability

• Hermetic Metal/Ceramic Package

DESCRIPTION

The FLC257MH-6 is a power GaAs FET that is designed for general

purpose applications in the C-Band frequency range as it provides

superior power, gain, and efficiency.

Fujitsu’s stringent Quality Assurance Program assures the highest

reliability and consistent performance.

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Saturated Drain Current

Transconductance

Pinch-off Voltage

Gate Source Breakdown Voltage

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Power-added Efficiency

Thermal Resistance

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

1. The drain-source operating voltage (V DS ) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 17.8 and -1.2 mA respectively with

3. The operating channel temperature (T ch ) should not exceed 145°C.

gate resistance of 200Ω.

Item

Symbol

V GSO

G 1dB

I DSS

P 1dB

η add

R th

g m

Symbol

V p

V DS

V GS

T stg

T ch

P T

V DS = 5V, V GS = 0V

V DS = 5V, I DS =600mA

V DS = 5V, I DS =50mA

I GS = -50µA

V DS = 10V,

I DS = 0.6 I DSS (Typ.),

f = 6.4 GHz

Channel to Case

Test Conditions

Condition

T c = 25°C

C-Band Power GaAs FET

Min.

32.5

-1.0

8.0

-5

FLC257MH-6

-65 to +175

Rating

Limit

1000 1500

Typ.

34.0

175

-2.0

500

9.0

-5

G.C.P.: Gain Compression Point

Max.

-3.5

°C/W

dBm

Unit

°C

Related parts for FLC257MH-6

FLC257MH-6 Summary of contents

Page 1

... High PAE: η add = 36%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC257MH power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25° ...

Page 2

... FLC257MH-6 C-Band Power GaAs FET POWER DERATING CURVE 100 150 200 Case Temperature (°C) OUTPUT POWER vs. INPUT POWER +10V ≈ 0.6 I DSS f = 6.4 GHz 33 P out Input Power (dBm) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE ...

Page 3

... Download S-Parameters, click here 3 FLC257MH +90° 5.5 6.5 5GHz 0° 7.5 7.5 .02 8 .04 .06 .08 -90° S22 MAG ANG .351 -157.1 .719 -163.9 .751 -167 ...

Page 4

... FLC257MH-6 C-Band Power GaAs FET 2-ø1.8±0.15 (0.071) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ ...

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