TS83C51RD2 ATMEL [ATMEL Corporation], TS83C51RD2 Datasheet - Page 12

• Manufacturer Part Number: TS83C51RD2
• Description: Qualification Package TS87C51RD2 / TS83C51RD2 CMOS 0.5Um
• Manufacturer: ATMEL [ATMEL Corporation]

Qualpack TS87C51RD2/TS83C51RD2
4.2.1.3.2 High Voltage MOS Gate oxide transistors
High voltage gate oxide transistors are used within the EPROM circuits to increase the external programming
voltage up to 14.5 Volts. This operation is needed to reach the appropriate programming conditions. As a result,
the maximum voltage between gate and source/drain of high voltage MOS transistors can be about 10 Volts .
The experiment consists of the application of an accelerated constant voltage stress until the breakdown of the
oxide is reached. The time of the breakdown is then extrapolated for nominal voltage condition.
The capacitor is made with a 20nm oxide growth on P- substrate and the electrode is phosphorus doped poly : the
capacitor area is 0.23 mm².
The Time Dependant Dielectric Breakdown is accelerated in voltage and temperature.The temperature is set to
150°C so no acceleration factor depending on temperature is needed for the extrapolation of product lifetime. An
unique accelerated electrical field of 9 MV/cm (19.4V for this oxide thickness) has been applied.
The experiment has been performed on capacitors issued from 3 wafers coming from 3 different lots : a set of 28
capacitors has been stressed.
A cumulative plot of failures obtained first at 19.4V and the second one projected to 10V with the relevant model
are presented on the following figure :
June 2001
-10
-2
-4
-6
-8
4
2
0
0
2
4
6
19.4
V
8
SCMOS3 NV HVOX
Log(t(s))
10
12
10V
14
Atmel Wireless & Microcontrollers
16
18
Data
Model